Photocurrent enhancement in a GaAs metal-semiconductor-metal photodetector due to ultrasmall Au islands

A new GaAs metal-semiconductor-metal photodetector has been demonstrated which uses ultrasmall gold islands deposited on a lightly doped epitaxial layer. The fabricated devices showed an appreciable photocurrent enhancement with respect to conventional metal-semiconductor-metal devices at a bias of...

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Bibliographic Details
Published in:Applied physics letters 1988-03, Vol.52 (12), p.987-989
Main Authors: KOSCIELNIAK, W. C, KOLBAS, R. M, LITTLEJOHN, M. A, LICZNERSKI, B. W
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:A new GaAs metal-semiconductor-metal photodetector has been demonstrated which uses ultrasmall gold islands deposited on a lightly doped epitaxial layer. The fabricated devices showed an appreciable photocurrent enhancement with respect to conventional metal-semiconductor-metal devices at a bias of less than 4 V and soft breakdown characteristics above 4 V. Details of the fabrication procedure are presented, and some possible mechanisms to explain this enhancement are suggested.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.99250