Combined Rayleigh and Raman scattering study of Al x Ga1− x As grown via molecular beam epitaxy under reflection high-energy electron diffraction determined growth conditions

Rayleigh and Raman scattering studies reveal a direct correlation between the degree of disorder and growth kinetics attendant to the chosen growth conditions in molecular beam epitaxial growth. This inference is derived from studies on AlxGa1−xAs alloys grown under growth conditions indicated by re...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1988-01, Vol.52 (1), p.42-44
Main Authors: Tang, W. C., Lao, P. D., Madhukar, A., Cho, N. M.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Rayleigh and Raman scattering studies reveal a direct correlation between the degree of disorder and growth kinetics attendant to the chosen growth conditions in molecular beam epitaxial growth. This inference is derived from studies on AlxGa1−xAs alloys grown under growth conditions indicated by reflection high-energy electron diffraction intensity dynamics to be near optimal and away from optimal.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.99311