Combined Rayleigh and Raman scattering study of Al x Ga1− x As grown via molecular beam epitaxy under reflection high-energy electron diffraction determined growth conditions

Rayleigh and Raman scattering studies reveal a direct correlation between the degree of disorder and growth kinetics attendant to the chosen growth conditions in molecular beam epitaxial growth. This inference is derived from studies on AlxGa1−xAs alloys grown under growth conditions indicated by re...

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Published in:Applied physics letters 1988-01, Vol.52 (1), p.42-44
Main Authors: Tang, W. C., Lao, P. D., Madhukar, A., Cho, N. M.
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Language:English
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description Rayleigh and Raman scattering studies reveal a direct correlation between the degree of disorder and growth kinetics attendant to the chosen growth conditions in molecular beam epitaxial growth. This inference is derived from studies on AlxGa1−xAs alloys grown under growth conditions indicated by reflection high-energy electron diffraction intensity dynamics to be near optimal and away from optimal.
doi_str_mv 10.1063/1.99311
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source AIP_美国物理联合会期刊回溯（NSTL购买）
title Combined Rayleigh and Raman scattering study of Al x Ga1− x As grown via molecular beam epitaxy under reflection high-energy electron diffraction determined growth conditions
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