Rapid thermal annealing of elevated-temperature silicon implants in InP

Rapid thermal annealing of elevated-temperature Si implants in InP is shown to result in higher donor activation and electron mobility with lower-temperature–shorter-anneal cycles than for room-temperature implants. The reduced cycles (temperature below 800 °C with times of ∼10 s) also result in pro...

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Bibliographic Details
Published in:Applied physics letters 1988-01, Vol.52 (4), p.299-301
Main Authors: TELL, B, BROWN-GOEBELER, K. F, CHENG, C. L
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Surface conductivity and carrier phenomena
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Summary:Rapid thermal annealing of elevated-temperature Si implants in InP is shown to result in higher donor activation and electron mobility with lower-temperature–shorter-anneal cycles than for room-temperature implants. The reduced cycles (temperature below 800 °C with times of ∼10 s) also result in process simplification with negligible thermal surface degradation and insignificant Si diffusion. The results are demonstrated with a dual-energy implant scheme applicable to field-effect transistors and with a single-energy heavy-dose implant useful for achieving low-resistance ohmic contacts.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.99499