Dark-line observations in failed quantum well lasers

The electron-beam-induced current technique has been used to disclose dark-line patterns in degraded AlxGa1−xAs quantum well lasers. At least four distinct types of pattern exist, each being characteristic of a particular device structure.

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Published in:Applied physics letters 1988-04, Vol.52 (16), p.1347-1348
Main Authors: WATERS, R. G, BERTASKA, R. K
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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container_title Applied physics letters
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description The electron-beam-induced current technique has been used to disclose dark-line patterns in degraded AlxGa1−xAs quantum well lasers. At least four distinct types of pattern exist, each being characteristic of a particular device structure.
doi_str_mv 10.1063/1.99640
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ispartof Applied physics letters, 1988-04, Vol.52 (16), p.1347-1348
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_99640
source AIP Digital Archive
subjects Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
title Dark-line observations in failed quantum well lasers
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