Multilayer metallization structures with titanium nitride and titanium silicide prepared by multipulse laser irradiation

We synthesized titanium nitride and titanium silicide layers on silicon by only one-step multipulse laser irradiation of titanium-coated silicon wafers in a jet of nitrogen, with characteristics appropriate for utilization in metallization schemes with very large scale integration devices.

Saved in:
Bibliographic Details
Published in:Applied physics letters 1988-04, Vol.52 (15), p.1225-1227
Main Authors: CRACIUM, V, MIHAILESCU, I. N, URSU, I, CRACIUNOIU, F, CORICI, A, LEGGIERI, G, LUCHES, A, NASSISI, V, MARTINO, M
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We synthesized titanium nitride and titanium silicide layers on silicon by only one-step multipulse laser irradiation of titanium-coated silicon wafers in a jet of nitrogen, with characteristics appropriate for utilization in metallization schemes with very large scale integration devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.99674