Low-loss GaAs/AlGaAs waveguide phase modulator using a W-shaped index profile

We demonstrate a low-loss semiconductor optical waveguide phase modulator for the 1.5 μm wavelength region. The device, based on a p-i-n diode/heterostructure waveguide, utilizes a novel epilayer structure to reduce propagation losses associated with doped electrode layers. Propagation loss below 1...

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Bibliographic Details
Published in:Applied physics letters 1988-11, Vol.53 (19), p.1803-1805
Main Authors: DERI, R. J, KAPON, E, HARBISON, J. P, SETO, M, YUN, C. P, FLOREZ, L. T
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Integrated optics. Optical fibers and wave guides
Optical and optoelectronic circuits
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Summary:We demonstrate a low-loss semiconductor optical waveguide phase modulator for the 1.5 μm wavelength region. The device, based on a p-i-n diode/heterostructure waveguide, utilizes a novel epilayer structure to reduce propagation losses associated with doped electrode layers. Propagation loss below 1 dB/cm, significantly lower than previously reported values for conventional semiconductor waveguide phase modulators, was achieved without sacrificing modulator efficiency.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.99786