Layer-exchange crystallization for low-temperature (∼450 °C) formation of n-type tensile-strained Ge on insulator

Layer-exchange crystallization of Ge using a group-V element has been investigated to develop a low-temperature (

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Bibliographic Details
Published in:Applied physics letters 2020-10, Vol.117 (17)
Main Authors: Gao, Hongmiao, Sadoh, Taizoh
Format: Article
Language:English
Subjects:
Annealing
Applied physics
Crystal growth
Crystal structure
Crystallization
Diffusion barriers
Diffusion layers
Electronic devices
Evaporation
Exchanging
Free electrons
Low temperature
Substrates
Thickness
Thin films
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Description
Summary:Layer-exchange crystallization of Ge using a group-V element has been investigated to develop a low-temperature (
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0020489