High yield uniformity in pseudo-vertical diamond Schottky barrier diodes fabricated on half-inch single-crystal wafers

We fabricated diamond pseudo-vertical Schottky barrier diodes using a half-inch semi-insulative diamond (100) wafer. Most diodes exhibited a large rectifying ratio (>1010) with undetectable leakage current at a reverse bias of 5 V (0.6 MV cm−1), with only 2% of diodes exhibiting an Ohmic-like lea...

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Bibliographic Details
Published in:Applied physics letters 2020-12, Vol.117 (26)
Main Authors: Hanada, Takanori, Ohmagari, Shinya, Kaneko, Junichi H., Umezawa, Hitoshi
Format: Article
Language:English
Subjects:
Applied physics
Correlation analysis
Correlation coefficients
Cracks
Crystal defects
Crystallites
Diamonds
Electric field strength
Electrical properties
Factor analysis
Leakage current
Schottky diodes
Single crystals
Surface defects
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Summary:We fabricated diamond pseudo-vertical Schottky barrier diodes using a half-inch semi-insulative diamond (100) wafer. Most diodes exhibited a large rectifying ratio (>1010) with undetectable leakage current at a reverse bias of 5 V (0.6 MV cm−1), with only 2% of diodes exhibiting an Ohmic-like leakage current. Surface defects were observed under the Schottky barrier diode, and their impacts on electrical properties were analyzed using a Murphy model and correlation factor analysis. We found that most crystalline defects (surface hillocks) were electrically non-active and that non-epitaxial crystallites and process-related field-plate cracks were the main defects that induced a large leakage current. Schottky barrier diodes without such killer defects showed a high electric field strength of ∼5 MV cm−1.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0027729