Exchange bias and spin–orbit torque in the Fe3GeTe2-based heterostructures prepared by vacuum exfoliation approach

Magnetic two-dimensional (2D) van der Waals (vdWs) materials are receiving increased attention due to their exceptional properties and potential applications in spintronic devices. Because exchange bias and spin–orbit torque (SOT)-driven magnetization switching are basic ingredients for spintronic d...

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Bibliographic Details
Published in:Applied physics letters 2021-06, Vol.118 (26)
Main Authors: Zhang, Yu, Xu, Hongjun, Yi, Changjiang, Wang, Xiao, Huang, Yuan, Tang, Jian, Jiang, Jialiang, He, Congli, Zhao, Mingkun, Ma, Tianyi, Dong, Jing, Guo, Chenyang, Feng, Jiafeng, Wan, Caihua, Wei, Hongxiang, Du, Haifeng, Shi, Youguo, Yu, Guoqiang, Zhang, Guangyu, Han, Xiufeng
Format: Article
Language:English
Subjects:
Applied physics
Bias
Devices
Electrons
Exchanging
Exfoliation
Heterostructures
Magnetic switching
Oxidation
Torque
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Summary:Magnetic two-dimensional (2D) van der Waals (vdWs) materials are receiving increased attention due to their exceptional properties and potential applications in spintronic devices. Because exchange bias and spin–orbit torque (SOT)-driven magnetization switching are basic ingredients for spintronic devices, it is of pivotal importance to demonstrate these effects in the 2D vdWs material-based magnetic heterostructures. In this work, we employ a vacuum exfoliation approach to fabricate Fe3GeTe2 (FGT)/Ir22Mn78 (IrMn) and FGT/Pt bilayers, which have high-quality interfaces. An out-of-plane exchange bias of up to 895 Oe is obtained in the former bilayer, which is larger than that of the previously studied bilayers. In the latter bilayer, the SOT switching of the perpendicularly magnetized FGT is realized, which exhibits higher SOT-driven switching performance compared to the previously studied FGT/Pt bilayer devices with interfacial oxidation. The minimum of SOT efficiency is further determined to be 0.18 ± 0.04, comparable to the previously reported values for the Pt/Co and Pt/CoFeB bilayers. This work highlights the importance of the high-quality interface for the exchange bias and SOT effect and may pave the way for implementing 2D vdWs in spintronic devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0050483