Effective neutron detection using vertical-type BGaN diodes

In this study, vertical-type thick BGaN PIN diodes were successfully fabricated to improve the neutron capture rate of BGaN diodes by improving the BGaN epitaxial growth technique. In this technique, 5-μm-thick epitaxial growth was achieved using trimethylboron as a B metal-organic source, which sup...

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Bibliographic Details
Published in:Journal of applied physics 2021-09, Vol.130 (12)
Main Authors: Nakano, Takayuki, Mochizuki, Ken, Arikawa, Takuya, Nakagawa, Hisaya, Usami, Shigeyoshi, Honda, Yoshio, Amano, Hiroshi, Vogt, Adrian, Schütt, Sebastian, Fiederle, Michael, Kojima, Kazunobu, Chichibu, Shigefusa F., Inoue, Yoku, Aoki, Toru
Format: Article
Language:English
Subjects:
Applied physics
Energy spectra
Epitaxial growth
Neutron counters
Nuclear capture
Particle energy
PIN diodes
Position measurement
Residual energy
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Summary:In this study, vertical-type thick BGaN PIN diodes were successfully fabricated to improve the neutron capture rate of BGaN diodes by improving the BGaN epitaxial growth technique. In this technique, 5-μm-thick epitaxial growth was achieved using trimethylboron as a B metal-organic source, which suppressed the gas-phase reaction. The α-particle energy spectrum, the neutron pulse signal, and the residual energy of particles emitted from a neutron capture reaction were measured using the fabricated BGaN diodes by performing radiation detection measurements. The detected signal position in the neutron detection signal spectrum was similar to that of 2.3 MeV α-particles. These results indicate that vertical-type BGaN diodes can be used as effective neutron detectors.
ISSN:0021-8979
1089-7550
DOI:10.1063/5.0051053