Enhancement of photoelectron emission efficiency from quantum dot solids, through electrical field biasing of interfaces

It is shown through comparison with experimental results that the efficiency of quantum dot (QD) film-based photoemission would be impacted by an inadequate supply of electrons from an electron source. An explanation for the related photocurrent droop, as arising from restricted electron transmissio...

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Bibliographic Details
Published in:Applied physics letters 2021-06, Vol.118 (26)
Main Authors: Eshraghi, K., Bandaru, P. R.
Format: Article
Language:English
Subjects:
Applied physics
Efficiency
Electric fields
Electrons
Photoelectric effect
Photoelectric emission
Photoelectrons
Quantum dots
Quantum efficiency
Substrates
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Summary:It is shown through comparison with experimental results that the efficiency of quantum dot (QD) film-based photoemission would be impacted by an inadequate supply of electrons from an electron source. An explanation for the related photocurrent droop, as arising from restricted electron transmission at the substrate-QD interface as well as between the QDs, is proposed. It is suggested that interfacial potential based biasing schemes could considerably enhance electronic coupling for improved transmission and quantum efficiency. Modeling indicates that electric fields of ∼450 MV/m would be necessary for ensuring electron transmission coefficients close to unity.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0052593