Determination of site occupancy of boron in 6H–SiC by multiple-wavelength neutron holography

The local structure around boron doped in 6H-type silicon carbide (SiC) was investigated using neutron holography. Three-dimensional atomic images reconstructed from multiple-wavelength holograms revealed the boron substitution for both silicon and carbon. To determine boron locations accurately, we...

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Bibliographic Details
Published in:Applied physics letters 2022-03, Vol.120 (13)
Main Authors: Hayashi, Kouichi, Lederer, Maximilian, Fukumoto, Yohei, Goto, Masashi, Yamamoto, Yuta, Happo, Naohisa, Harada, Masahide, Inamura, Yasuhiro, Oikawa, Kenichi, Ohoyama, Kenji, Wellmann, Peter
Format: Article
Language:English
Subjects:
Applied physics
Boron
Holograms
Holography
Image reconstruction
Occupancy
Silicon carbide
Steepest descent method
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Summary:The local structure around boron doped in 6H-type silicon carbide (SiC) was investigated using neutron holography. Three-dimensional atomic images reconstructed from multiple-wavelength holograms revealed the boron substitution for both silicon and carbon. To determine boron locations accurately, we calculated holograms with varying occupancies of six different sites and fit image intensities with those obtained from experimental holograms by the steepest descent method. As a result, it was found that boron atoms were selectively located at the Si–C-cubic site layer. Furthermore, boundaries right above the boron locations were suggested from the absence of atomic images in the upper region of reconstruction.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0080895