Ytterbium oxide electron injection interface in organic light-emitting diode

The ytterbium oxide (Yb3+) is found to have an extremely low work function of 2.42 eV, which is even lower than that of its metallic form Yb0 (2.64 eV). The stability of oxides makes Yb3+ an ideal electron injection material for both top-emitting and bottom-emitting organic light-emitting diodes (TO...

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Bibliographic Details
Published in:Applied physics letters 2022-03, Vol.120 (12)
Main Authors: Man, Jia-Xiu, Hu, Jun-Tao, Wang, Deng-Ke, He, Shou-Jie, Lu, Zheng-Hong
Format: Article
Language:English
Subjects:
Applied physics
Current efficiency
Efficiency
Electron transport
Metal oxides
Molecular orbitals
Organic light emitting diodes
Photoelectric emission
Power efficiency
Work functions
Ytterbium
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Summary:The ytterbium oxide (Yb3+) is found to have an extremely low work function of 2.42 eV, which is even lower than that of its metallic form Yb0 (2.64 eV). The stability of oxides makes Yb3+ an ideal electron injection material for both top-emitting and bottom-emitting organic light-emitting diodes (TOLED and BOLED). The device test data indeed show that at 1000 nit luminance, the TOLED has a 94 cd/A current efficiency and 70 lm/W power efficiency, and BOLED has a 76 cd/A and 60 lm/W efficiency, respectively. X-ray and ultraviolet photoemission spectroscopical studies indicate that the Fermi level of the metal oxide is pinned to the lowest unoccupied molecular orbital of the electron transport layer, leading to the formation of a cathode interface with an ultra-low electron injection barrier.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0084140