Vertical GaN trench MOSFETs with step-graded channel doping

Vertical GaN trench MOSFETs have shown enormous potential for efficient power switching applications. Low ON-resistance (RON) to minimize power loss, high output current (ION) to maximize driving capability, and large threshold voltage (Vth) to avoid false turn-on are highly desirable. This work rep...

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Bibliographic Details
Published in:Applied physics letters 2022-06, Vol.120 (24)
Main Authors: Zhu, Renqiang, Jiang, Huaxing, Tang, Chak Wah, Lau, Kei May
Format: Article
Language:English
Subjects:
Applied physics
Doping
Gallium nitrides
MOSFETs
Threshold voltage
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Summary:Vertical GaN trench MOSFETs have shown enormous potential for efficient power switching applications. Low ON-resistance (RON) to minimize power loss, high output current (ION) to maximize driving capability, and large threshold voltage (Vth) to avoid false turn-on are highly desirable. This work reports vertical GaN trench MOSFETs with step-graded channel doping. Conventional devices with uniform channel doping were involved for comparison. The experimental results show that step-graded channel doping can achieve an improved trade-off between ION, RON, and Vth than uniform channel doping.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0088251