Room temperature emission spectroscopy of GeSn waveguides under optical pumping

Waveguides were fabricated from highly n-type doped GeSn layers with Sn content at 5.4%–6.2% and grown on Ge-buffered Si substrates. The waveguides were optically pumped using a 976 nm continuous-wave laser, and the waveguide emission spectrum was collected and analyzed. The results indicate a non-l...

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Bibliographic Details
Published in:AIP advances 2022-07, Vol.12 (7), p.075016-075016-6
Main Authors: Li, Z., Zhao, Y., Gallagher, J. D., Lombardo, D., Sarangan, A., Agha, Imad, Kouvetakis, J., Menéndez, J., Mathews, J.
Format: Article
Language:English
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Summary:Waveguides were fabricated from highly n-type doped GeSn layers with Sn content at 5.4%–6.2% and grown on Ge-buffered Si substrates. The waveguides were optically pumped using a 976 nm continuous-wave laser, and the waveguide emission spectrum was collected and analyzed. The results indicate a non-linear power increase via higher injection-level at room temperature. Comprehensive theoretical models for the waveguide emission power dependence were developed to reproduce experimental data and provide an understanding of the nonlinear power dependence.
ISSN:2158-3226
2158-3226
DOI:10.1063/5.0094589