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Room temperature emission spectroscopy of GeSn waveguides under optical pumping
Waveguides were fabricated from highly n-type doped GeSn layers with Sn content at 5.4%–6.2% and grown on Ge-buffered Si substrates. The waveguides were optically pumped using a 976 nm continuous-wave laser, and the waveguide emission spectrum was collected and analyzed. The results indicate a non-l...
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| Published in: | AIP advances 2022-07, Vol.12 (7), p.075016-075016-6 |
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| Main Authors: | , , , , , , , , |
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| Language: | English |
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| container_end_page | 075016-6 |
| container_issue | 7 |
| container_start_page | 075016 |
| container_title | AIP advances |
| container_volume | 12 |
| creator | Li, Z. Zhao, Y. Gallagher, J. D. Lombardo, D. Sarangan, A. Agha, Imad Kouvetakis, J. Menéndez, J. Mathews, J. |
| description | Waveguides were fabricated from highly n-type doped GeSn layers with Sn content at 5.4%–6.2% and grown on Ge-buffered Si substrates. The waveguides were optically pumped using a 976 nm continuous-wave laser, and the waveguide emission spectrum was collected and analyzed. The results indicate a non-linear power increase via higher injection-level at room temperature. Comprehensive theoretical models for the waveguide emission power dependence were developed to reproduce experimental data and provide an understanding of the nonlinear power dependence. |
| doi_str_mv | 10.1063/5.0094589 |
| format | article |
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D.</creatorcontrib><creatorcontrib>Lombardo, D.</creatorcontrib><creatorcontrib>Sarangan, A.</creatorcontrib><creatorcontrib>Agha, Imad</creatorcontrib><creatorcontrib>Kouvetakis, J.</creatorcontrib><creatorcontrib>Menéndez, J.</creatorcontrib><creatorcontrib>Mathews, J.</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>AIP advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, Z.</au><au>Zhao, Y.</au><au>Gallagher, J. D.</au><au>Lombardo, D.</au><au>Sarangan, A.</au><au>Agha, Imad</au><au>Kouvetakis, J.</au><au>Menéndez, J.</au><au>Mathews, J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Room temperature emission spectroscopy of GeSn waveguides under optical pumping</atitle><jtitle>AIP advances</jtitle><date>2022-07-01</date><risdate>2022</risdate><volume>12</volume><issue>7</issue><spage>075016</spage><epage>075016-6</epage><pages>075016-075016-6</pages><issn>2158-3226</issn><eissn>2158-3226</eissn><coden>AAIDBI</coden><abstract>Waveguides were fabricated from highly n-type doped GeSn layers with Sn content at 5.4%–6.2% and grown on Ge-buffered Si substrates. The waveguides were optically pumped using a 976 nm continuous-wave laser, and the waveguide emission spectrum was collected and analyzed. The results indicate a non-linear power increase via higher injection-level at room temperature. 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| ispartof | AIP advances, 2022-07, Vol.12 (7), p.075016-075016-6 |
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| language | eng |
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| source | Full-Text Journals in Chemistry (Open access); AIP Open Access Journals |
| title | Room temperature emission spectroscopy of GeSn waveguides under optical pumping |
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