Demonstration of room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001)

• Published in: Applied physics letters 2022-08, Vol.121 (6)
• Main Authors: Jiang, Chen, Liu, Hao, Wang, Jun, Ren, Xiaomin, Wang, Qi, Liu, Zhuoliang, Ma, Bojie, Liu, Kai, Ren, Ren, Zhang, Yidong, Cai, Shiwei, Huang, Yongqing
• Format: Article
• Language: English
• Subjects: Aluminum gallium arsenides; Antiphase boundaries; Applied physics; Continuous radiation; Epitaxial growth; Indium gallium arsenides; Injection current; Metalorganic chemical vapor deposition; Molecular beam epitaxy; Optoelectronics; Organic chemistry; Quantum well lasers; Room temperature; Silicon substrates; Superlattices; Threshold currents
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/5.0098264

Room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001) has been demonstrated. A 420 nm thick GaAs epilayer completely free of antiphase domains was initially grown on the silicon substrate in a metal-organic chemical vapor deposition system and the other epilayers, including four sets of five-period strained-layer superlattices and the laser-structural layers, were successively grown in a molecular beam epitaxy system. The lasers were prepared as broad-stripe Fabry–Pérot ones with a stripe width of 21.5 μm and a cavity length of 1 mm. Typically, the threshold current and the corresponding threshold current density are 186.4 mA and 867 A/cm2, respectively. The lasing wavelength is around 980 nm, and the slope efficiency is 0.097 W/A with a single-facet output power of 22.5 mW at an injection current of 400 mA. This advancement makes the silicon-based monolithic optoelectronic integration relevant to quantum well lasers more promising with an enhanced feasibility.