Demonstration of ultraviolet-B AlGaN-based laser diode operation with a peak light output power of 150 mW by improving injection efficiency through polarization charge modulation

In this study, AlGaN-based ultraviolet-B band laser diodes with 150-mW peak output power in pulsed operation were demonstrated at room temperature. The oscillation wavelength, differential quantum efficiency, and slope efficiency of a laser diode were 300 nm, 3.6%, and 0.15 W/A, respectively. These...

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Bibliographic Details
Published in:Applied physics letters 2022-12, Vol.121 (25)
Main Authors: Kondo, Ryosuke, Yabutani, Ayumu, Omori, Tomoya, Yamada, Kazuki, Matsubara, Eri, Hasegawa, Ryota, Nishibayashi, Toma, Iwayama, Sho, Takeuchi, Tetsuya, Kamiyama, Satoshi, Miyake, Hideto, Iwaya, Motoaki
Format: Article
Language:English
Subjects:
Applied physics
Charge efficiency
Polarization
Quantum efficiency
Room temperature
Semiconductor lasers
Waveguides
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Summary:In this study, AlGaN-based ultraviolet-B band laser diodes with 150-mW peak output power in pulsed operation were demonstrated at room temperature. The oscillation wavelength, differential quantum efficiency, and slope efficiency of a laser diode were 300 nm, 3.6%, and 0.15 W/A, respectively. These results were obtained by increasing the injection efficiency and decreasing the positive fixed polarization charge formed at the interface between a p-side waveguide layer and an electron blocking layer when polarization doping is formed in a p-AlGaN cladding layer.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0135033