Vacancy-type defects in AlInN/AlN/GaN structures probed by monoenergetic positron beam

Vacancy-type defects in AlInN(10 nm)/AlN(1–2 nm)/GaN were probed by using a positron annihilation technique. The crystal quality of the AlInN layer and atomic diffusion near heterointerfaces were also studied by x-ray diffraction reciprocal space mapping, transmission electron microscopy, and energy...

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Bibliographic Details
Published in:Journal of applied physics 2023-06, Vol.133 (22)
Main Authors: Uedono, Akira, Kimura, Yasuki, Hoshii, Takuya, Kakushima, Kuniyuki, Sumiya, Masatomo, Tsukui, Masayuki, Miyano, Kiyotaka, Mizushima, Ichiro, Yoda, Takashi, Tsutsui, Kazuo
Format: Article
Language:English
Subjects:
Aluminum nitride
Crystal defects
Defect annealing
Diffusion layers
Electron gas
Gallium nitrides
Positron annihilation
Positron beams
Thickness
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Summary:Vacancy-type defects in AlInN(10 nm)/AlN(1–2 nm)/GaN were probed by using a positron annihilation technique. The crystal quality of the AlInN layer and atomic diffusion near heterointerfaces were also studied by x-ray diffraction reciprocal space mapping, transmission electron microscopy, and energy-dispersive x-ray spectroscopy. For an as-deposited sample without an AlN spacer layer (AlInN/GaN), Ga atoms diffused into the AlInN layer, and as a result, the concentration of Ga-vacancy-type defects in the GaN layer increased. The vacancy concentration was decreased by inserting the AlN layer, which was attributed to the suppression of out-diffusion of Ga from the GaN layer. The effect of the thickness of the AlN layer on the mobility of two-dimensional electron gas is discussed in terms of the introduction of vacancies into the channel region. The annealing behaviors of vacancies in the GaN layer and atomic exchange near heterointerfaces are also discussed.
ISSN:0021-8979
1089-7550
DOI:10.1063/5.0153128