Tuning donor level of nitrogen-doped diamond by deep strain engineering—An ab initio study

The development of diamond semiconductor devices has been hindered by the challenge of preparing n-type diamond with a shallow donor state. Recently, elastic strain engineering has emerged as a promising strategy for modulating the electrical properties of diamond. In this study, we used first-princ...

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Bibliographic Details
Published in:Applied physics letters 2023-08, Vol.123 (6)
Main Authors: Yang, Limin, Fan, Rong, Hu, Alice, Ma, Junzhang, Liu, Yingxia, Lu, Yang
Format: Article
Language:English
Subjects:
Applied physics
Compressive properties
Design of experiments
Diamonds
Electrical properties
First principles
Nitrogen
Semiconductor devices
Strain
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Summary:The development of diamond semiconductor devices has been hindered by the challenge of preparing n-type diamond with a shallow donor state. Recently, elastic strain engineering has emerged as a promising strategy for modulating the electrical properties of diamond. In this study, we used first-principles calculations to investigate the influence of large, uniaxial elastic strain on the electrical properties of nitrogen (N)-doped diamond, particularly the donor level. We found that both tensile and compressive strains can shift the donor level of N to a shallower state, but compressive strains of more than 9% along [100] appear more effective in making N a shallower donor in strained diamond. This study offers insights for future experimental design to combine strain engineering and doping toward practical diamond semiconductor devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0159829