Enhanced photogalvanic effect in MoSSe monolayer with grain boundaries

The photogalvanic effect (PGE) in two-dimensional materials has emerged as a fascinating mechanism for generating photocurrent in non-centrosymmetric crystals without semiconductor p–n junction or bias voltage. In this paper, the impact of grain boundaries (GBs) on the performance of photogalvanic d...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2023-11, Vol.123 (21)
Main Authors: Sun, Naizhang, Ye, Han, Zhou, Wenlin, Yang, Ruhao, Quhe, Ruge, Liu, Yumin, Chen, Zhihui
Format: Article
Language:English
Subjects:
Applied physics
Grain boundaries
Linear polarization
Monolayers
P-n junctions
Photoelectric effect
Photoelectric emission
Polarized light
Quantum transport
Two dimensional materials
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The photogalvanic effect (PGE) in two-dimensional materials has emerged as a fascinating mechanism for generating photocurrent in non-centrosymmetric crystals without semiconductor p–n junction or bias voltage. In this paper, the impact of grain boundaries (GBs) on the performance of photogalvanic device with Janus MoSSe monolayer is theoretically investigated by quantum transport simulations. Two 4|8 GBs along armchair direction are taken into consideration. Under the illumination of linearly polarized light, we observe a significant enhancement of the PGE photocurrent in the visible light region, which can be attributed to the reduction of device's symmetry. The averaged enhancement ratios reach around 20 and 13 for two 4|8 GBs, respectively.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0177280