Investigation of ALD HfSiOx as gate dielectric on β-Ga2O3 (001)

The interface and bulk properties of ∼20 nm hafnium-silicon-oxide (HfSiOx) dielectric deposited by atomic layer deposition (ALD) on (001) β-Ga2O3 were investigated systematically using deep ultraviolet photo-assisted capacitance–voltage (C–V) and current–voltage (I–V) measurements. The ALD HfSiOx di...

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Bibliographic Details
Published in:Applied physics letters 2024-03, Vol.124 (13)
Main Authors: Zhai, Xin, Wen, Zhuoqun, Odabasi, Oguz, Achamyeleh, Eyosyas, Sun, Kai, Ahmadi, Elaheh
Format: Article
Language:English
Subjects:
Atomic layer epitaxy
Dielectric breakdown
Electric potential
Gallium oxides
Permittivity
Voltage
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Summary:The interface and bulk properties of ∼20 nm hafnium-silicon-oxide (HfSiOx) dielectric deposited by atomic layer deposition (ALD) on (001) β-Ga2O3 were investigated systematically using deep ultraviolet photo-assisted capacitance–voltage (C–V) and current–voltage (I–V) measurements. The ALD HfSiOx dielectric constant, bulk, and HfSiOx/Ga2O3 interface quality and breakdown field were determined, and the impact of post-deposition annealing (PDA) on these parameters was studied. PDA reduced near-interface traps resulting in a smaller hysteresis without changing the dielectric constant. An average trap density of 2.72 × 1012 and 1.06 × 1012 cm−2 eV−1 was measured on samples with PDA at 400 and 900 °C, respectively. In addition, a high dielectric constant of 9.28 and breakdown field as high as 8.7 MV/cm were achieved on these devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0179813