Thermoelectric response of textured Sb2Te3–BiSb and Sb2Te3–Bi2Te3 thin film junctions

• Published in: Applied physics letters 2024-04, Vol.124 (14)
• Main Authors: Nepal, Rajeev, Bajracharya, Prabesh, Kumar, Ravinder, Kolagani, Rajeswari, Budhani, Ramesh C.
• Format: Article
• Language: English
• Subjects: Ambient temperature; Antimony telluride; Bismuth tellurides; Carrier density; Comparative studies; Electron mobility; Hall effect; Seebeck effect; Tellurium; Thermoelectricity; Thin films; Topological insulators
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/5.0187554

Surface mounted thin film thermoelectric (TE) devices for localized cooling, power generation, and sensing are topics of immense current interest. Here, we establish the superior TE performance of thin film junctions made of topological insulators (TIs) Bi85Sb15 (BiSb) and Sb2Te3 by comparing their performance with those of Bi2Te3 and Sb2Te3. Thin films of these TIs were first evaluated for their carrier concentration, Hall mobility, resistivity, and thermopower. The Seebeck coefficient of BiSb, Sb2Te3, and Bi2Te3 measured against copper at ambient temperature is −100, +160, and −70 (±10) μV/K, while their power factors are 0.5, 0.5, and 0.45 (±0.05) 10−3 W m−1 K−2, respectively. Single TE junctions of BiSb–Sb2Te3 and Bi2Te3–Sb2Te3 yield a response of 272 and 240 (±10) μV/K, respectively. This comparative study shows that BiSb is a superior n-type counter electrode for Sb2Te3 compared to the n-type Bi2Te3. Moreover, Bi2Te3 is prone to tellurium antisite disorder, which affects its TE properties significantly.