SiC-based high electron mobility transistor

This paper describes the fabrication of a SiC-based high electron mobility transistor (HEMT). A single-crystal 3C–SiC layer was grown on a C-face 4H–SiC substrate, and 2D electron gas was induced at the 3C–SiC/4H–SiC heterointerface due to the unique polarization physics. The measured Hall mobility...

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Bibliographic Details
Published in:Applied physics letters 2024-03, Vol.124 (12)
Main Authors: Sazawa, Hiroyuki, Nakajima, Akira, Kuboya, Shigeyuki, Umezawa, Hitoshi, Kato, Tomohisa, Tanaka, Yasunori
Format: Article
Language:English
Subjects:
Electron gas
Hall effect
High electron mobility transistors
Room temperature
Semiconductor devices
Silicon substrates
Single crystals
Transconductance
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Summary:This paper describes the fabrication of a SiC-based high electron mobility transistor (HEMT). A single-crystal 3C–SiC layer was grown on a C-face 4H–SiC substrate, and 2D electron gas was induced at the 3C–SiC/4H–SiC heterointerface due to the unique polarization physics. The measured Hall mobility of the 2DEG was 586 cm2/V s at room temperature. Source, gate, and drain electrodes were fabricated on the 3C–SiC surface. The drain current for the fabricated SiC-HEMT was measured to be 47.5 mA/mm, and the transconductance was estimated to be 13.5 mS/mm.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0202925