Effect of carbon coating on surface structure in annealing process of high-dose implanted/annealed SiC

• Published in: Journal of applied physics 2024-05, Vol.135 (18)
• Main Authors: Ishiji, Kotaro, Arita, Makoto, Adachi, Mariko, Sugie, Ryuichi, Morita, Yukihiro, Araki, Tsutomu
• Format: Article
• Language: English
• Subjects: Annealing; Carbon; Coating effects; Microscopy; Raman spectra; Raman spectroscopy; Roughening; Scanning probe microscopy; Silicon carbide; Spectrum analysis; Surface structure; Thermal expansion; Transmission electron microscopy
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/5.0205320

The effect of carbon coating on a surface structure of a high-dose implanted/annealed silicon carbide (SiC) during annealing was examined using scanning probe microscopy (SPM), deep-ultraviolet (DUV) Raman spectroscopy, and transmission electron microscopy (TEM). In SPM, the surfaces of 500- and 30 °C-implanted/annealed SiC samples without coating exhibited a periodic-step structure and granular structure, respectively. The difference between these surfaces is attributed to the absence or presence of residual implantation damage. In contrast, surface flatness was maintained in the 500 °C-implanted/annealed SiC sample with carbon coating. However, the surface of the coated 30 °C-implanted/annealed SiC sample exhibited a geometric structure with a lattice pattern parallel to the ⟨ 11 2 ¯ 0 ⟩ axes. The DUV Raman spectra and TEM images indicated that the implanted layer of this sample metamorphosed into a mixture of 3C-SiC twin domains and amorphous-SiC regions. During the cooling process after annealing, the 3C-SiC region was more raised than the amorphous-SiC region owing to the difference in the thermal expansion coefficients, thus resulting in the generation of a geometric surface structure. In the metamorphosed implanted layer, the carbon coating does not completely prevent surface roughening.