High-efficiency electroluminescence devices containing Si nanocrystals/SiC multilayers via improved carrier injection and recombination process

Realizing high efficiency of all Si-based light-emitting devices is currently one of interesting issues in order to develop monolithic opto-electronic integration on chips. Here, we report an electroluminescence device based on phosphorus (P)-doped silicon nanocrystals (Si NCs)/silicon carbide (SiC)...

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Bibliographic Details
Published in:Applied physics letters 2024-07, Vol.125 (3)
Main Authors: Sun, Teng, Wang, Yuhao, Han, Junnan, Chen, Jiaming, Zhu, Ting, Li, Dongke, Li, Wei, Xu, Jun, Chen, Kunji
Format: Article
Language:English
Subjects:
Carrier injection
Carrier recombination
Crystal defects
Current carriers
Defect annealing
Electroluminescence
Multilayers
Nanocrystals
Optoelectronic devices
Silicon carbide
Silicon substrates
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Summary:Realizing high efficiency of all Si-based light-emitting devices is currently one of interesting issues in order to develop monolithic opto-electronic integration on chips. Here, we report an electroluminescence device based on phosphorus (P)-doped silicon nanocrystals (Si NCs)/silicon carbide (SiC) multilayers by modulating carrier injection and recombination process. The p+-Si substrate is used instead of p-Si substrate for facilitating the hole injection into Si NCs. Additionally, the influences of annealing temperature on the device performance have been studied, and the optimized annealing temperature is achieved by balancing the crystallinity, defect state density, and recombination process.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0211513