InP-based high-performance extended short wavelength p-B-n infrared photodetector with InGaAs/GaAsSb type-II superlattice absorption layer

High-performance p-B-n infrared photodetectors based on In0.53Ga0.47As/Ga0.51 As0.49Sb type-II superlattices with an Al0.85Ga0.15AsSb barrier on an InP substrate have been demonstrated. These photodetectors exhibit 50% and 100% cutoff wavelengths of ∼2.1 μm and ∼2.6 μm, respectively. At a bias volta...

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Bibliographic Details
Published in:Applied physics letters 2024-09, Vol.125 (14)
Main Authors: Liang, Yan, Zhou, Wenguang, Zhang, Xiangyu, Chang, Faran, Li, Nong, Shan, Yifan, Zhang, Ye, Ye, Fan, Li, Chuanbo, Su, Xiangbin, Yang, Chengao, Hao, Hongyue, Wang, Guowei, Jiang, Dongwei, Wu, Donghai, Ni, Haiqiao, Xu, Yingqiang, Niu, Zhichuan, Zheng, Youdou, Shi, Yi
Format: Article
Language:English
Subjects:
Bias
Dark current
Electric potential
Indium phosphides
Infrared detectors
Photometers
Quantum efficiency
Shot noise
Substrates
Superlattices
Voltage
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Summary:High-performance p-B-n infrared photodetectors based on In0.53Ga0.47As/Ga0.51 As0.49Sb type-II superlattices with an Al0.85Ga0.15AsSb barrier on an InP substrate have been demonstrated. These photodetectors exhibit 50% and 100% cutoff wavelengths of ∼2.1 μm and ∼2.6 μm, respectively. At a bias voltage of −100 mV bias voltage, the device exhibits a peak responsivity of 0.618 A/W at 2.1 μm, corresponding to a quantum efficiency of 36.5%. The device exhibits a saturated dark current shot noise limited specific detectivity (D*) of 4.12  × 1010 cm·Hz1/2/W (at a peak responsivity of 2.1 μm) under −100 mV applied bias at 300 K.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0223557