Semiconductor laser utilizing intraband transitions between magnetic-film levels

A thin-film semiconductor laser is analyzed theoretically. The gain is calculated for transitions between magnetic-film levels. The threshold conditions are deduced. (AIP)

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Bibliographic Details
Published in:Soviet journal of quantum electronics 1975-08, Vol.5 (8), p.891-894
Main Authors: Aleksanyan, A G, Allakhverdyan, R G, Aleksanyan, Al G
Format: Article
Language:English
Subjects:
420300 -Engineering-Lasers
GAIN
N42210 -Engineering-Facilities & Equipment-Lasers
SEMICONDUCTOR LASERS- ENERGY-LEVEL TRANSITIONS
SPECIFICATIONS
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Description
Summary:A thin-film semiconductor laser is analyzed theoretically. The gain is calculated for transitions between magnetic-film levels. The threshold conditions are deduced. (AIP)
ISSN:0049-1748
2169-530X
DOI:10.1070/QE1975v005n08ABEH011644