Modelling of processes responsible for nonlinear absorption of UV laser radiation in ionic crystals

Two models of interaction of UV and VUV laser radiation with MgF{sub 2}, CaF{sub 2}, and BaF{sub 2} crystals are considered. In the first version, the laser radiation wavelength falls into the absorption region of F-centres, in the second version it is located in the short-wavelength region of the H...

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Bibliographic Details
Published in:Quantum electronics (Woodbury, N.Y.) N.Y.), 2000-08, Vol.30 (8), p.703-709
Main Authors: Kurbasov, Sergei V, Sergeev, P B
Format: Article
Language:English
Subjects:
ABSORPTION
ALKALINE EARTH METAL COMPOUNDS
BARIUM COMPOUNDS
BARIUM FLUORIDES
CALCIUM COMPOUNDS
CALCIUM FLUORIDES
CALCIUM HALIDES
CHEMICAL REACTIONS
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
COLOR CENTERS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTALS
DECOMPOSITION
DISSOCIATION
ELECTROMAGNETIC RADIATION
ENERGY-LEVEL TRANSITIONS
EXCITATION
F CENTERS
FAR ULTRAVIOLET RADIATION
FLUORIDES
FLUORINE COMPOUNDS
H CENTERS
HALIDES
HALOGEN COMPOUNDS
HOLES
IONIC CRYSTALS
LASER RADIATION
MAGNESIUM COMPOUNDS
MAGNESIUM FLUORIDES
NONLINEAR PROBLEMS
PHOTOCHEMICAL REACTIONS
PHOTOLYSIS
POINT DEFECTS
RADIATIONS
RELAXATION
SIMULATION
SORPTION
ULTRAVIOLET RADIATION
VACANCIES
WAVELENGTHS
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Summary:Two models of interaction of UV and VUV laser radiation with MgF{sub 2}, CaF{sub 2}, and BaF{sub 2} crystals are considered. In the first version, the laser radiation wavelength falls into the absorption region of F-centres, in the second version it is located in the short-wavelength region of the H-centre absorption wing. The photodissociation of F{sub 2}{sup -}-complexes in crystals into two holes is shown to be an efficient mechanism of defect formation in the crystal structure. The consideration of these and other processes of relaxation of electronic excitation allows one to explain many experimental effects produced by ionising and laser radiation in ionic crystals. (interaction of laser radiation with matter. laser plasma)
ISSN:1063-7818
1468-4799
DOI:10.1070/QE2000v030n08ABEH001794