Defect-deformation mechanism of spontaneous nucleation of an ensemble of pores in solids and its experimental verification

The defect-deformation (DD) mechanism of spontaneous formation of ensembles of seed pores during etching of semiconductors and metals is developed. The mechanism is based on the concept of generation and DD self-organisation of interstices and vacancies during etching. For p-Si, good agreement betwe...

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Bibliographic Details
Published in:Quantum electronics (Woodbury, N.Y.) N.Y.), 2002-06, Vol.32 (6), p.473-475
Main Authors: Emel'yanov, Vladimir I, Eremin, K I, Starkov, V V
Format: Article
Language:English
Subjects:
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DATA
DEFECTS
DEFORMATION
ELEMENTS
ETCHING
EXPERIMENTAL DATA
INFORMATION
MATERIALS
METALS
NUCLEATION
NUMERICAL DATA
POINT DEFECTS
SEMICONDUCTOR MATERIALS
SOLIDS
SURFACE FINISHING
VACANCIES
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Summary:The defect-deformation (DD) mechanism of spontaneous formation of ensembles of seed pores during etching of semiconductors and metals is developed. The mechanism is based on the concept of generation and DD self-organisation of interstices and vacancies during etching. For p-Si, good agreement between theoretical and experimental results is obtained. In particular, a quasi-hexagonal order in the arrangement of micropores on the surface is revealed, which was predicted by the DD model, and a control of the properties of the ensemble by means of external forces is demonstrated. (letters)
ISSN:1063-7818
1468-4799
DOI:10.1070/QE2002v032n06ABEH002225