High-power single-mode laser diodes based on carbon-doped quantum-well InGaAs/AlGaAs heterostructures

Emission parameters of single-mode laser diodes based on InGaAs/GaAs/AlGaAs heterostructures doped with carbon and grown by using the metallorganic vapour phase epitaxy (MOVPE) technique are studied. The obtained results show that maintaining a certain doping profile ensuring optimisation of series...

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Bibliographic Details
Published in:Quantum electronics (Woodbury, N.Y.) N.Y.), 2009-01, Vol.39 (1), p.18-20
Main Authors: Davydova, Evgeniya I, Ladugin, M A, Marmalyuk, Aleksandr A, Padalitsa, A A, Petrovskii, A V, Sukharev, A V, Uspenskii, Mikhail B, Shishkin, Viktor A
Format: Article
Language:English
Subjects:
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CARBON
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH METHODS
DOPED MATERIALS
ELEMENTS
EMISSION
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
MATERIALS
MATERIALS SCIENCE
NANOSTRUCTURES
NONMETALS
OPTIMIZATION
PNICTIDES
QUANTUM WELLS
VAPOR PHASE EPITAXY
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Summary:Emission parameters of single-mode laser diodes based on InGaAs/GaAs/AlGaAs heterostructures doped with carbon and grown by using the metallorganic vapour phase epitaxy (MOVPE) technique are studied. The obtained results show that maintaining a certain doping profile ensuring optimisation of series resistance and internal optical losses during all fabrication stages of the active element of a diode laser, provides for enhancement of the laser efficiency. Based on laser heterostructures studied in this paper, highly efficient single-transverse-mode laser diodes emitting 300 mW at 980 nm have been manufactured. (lasers)
ISSN:1063-7818
1468-4799
DOI:10.1070/QE2009v039n01ABEH013933