Properties of the barium strontium titanate film on the silicon substrate

A study of the optical, electrical, and photoelectric properties of the heterostructure of barium strontium titanate film on a silicon substrate was performed. An intense maximum is observed in the absorption spectrum of the heterostructure at 410 nm. The conductivity of the heterostructure signific...

Full description

Saved in:
Bibliographic Details
Published in:Ferroelectrics 2020-04, Vol.559 (1), p.30-35
Main Authors: Batalov, R. I., Zharkov, D. K., Pavlov, D. P., Migachev, S. A., Lunev, I. V., Elshin, A. S., Leontyev, A. V., Chibirev, A. O., Shaposhnikova, T. S., Mamin, R. F.
Format: Article
Language:English
Subjects:
Absorption spectra
Barium
barium strontium titanate
Barium strontium titanates
Conductivity
Electrical resistivity
ferroelectric thin films
Heterostructures
Ion implantation
Irradiation
Optical properties
Photoconductivity
Photoelectric effect
Photoelectricity
Silicon
Silicon substrates
Strontium
Temperature dependence
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A study of the optical, electrical, and photoelectric properties of the heterostructure of barium strontium titanate film on a silicon substrate was performed. An intense maximum is observed in the absorption spectrum of the heterostructure at 410 nm. The conductivity of the heterostructure significantly increases and the capacitance drops with increasing frequency. Photostimulated conductivity measurement showed that the intensity of photoconductivity significantly increased for the sample modified by Cr + ion implantation. The temperature dependence of the resistance under UV and green laser irradiation showed maxima at 100 and 150 K, and then the resistance decreased with increasing temperature.
ISSN:0015-0193
1563-5112
DOI:10.1080/00150193.2020.1722003