Study of the properties of a PZT thin film formed on a highly doped silicon substrate

Thin films of lead zirconate titanate were formed by plasma radiofrequency sputtering on a low-resistance silicon substrate. The properties of the films were studied by X-ray phase analysis, scanning electron microscopy, atomic force microscopy and, piezoresponse force microscopy. The domain structu...

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Bibliographic Details
Published in:Ferroelectrics 2022-05, Vol.592 (1), p.58-63
Main Authors: Petrov, V. V., Nesterenko, A. V., Il'ina, M. V.
Format: Article
Language:English
Subjects:
Atomic force microscopy
Coercivity
Energy harvesting
ferroelectric
Lead zirconate titanate
Lead zirconate titanates
Piezoelectricity
Radio frequency
Silicon
silicon substrate
Silicon substrates
thin film
Thin films
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Summary:Thin films of lead zirconate titanate were formed by plasma radiofrequency sputtering on a low-resistance silicon substrate. The properties of the films were studied by X-ray phase analysis, scanning electron microscopy, atomic force microscopy and, piezoresponse force microscopy. The domain structure was determined by the morphology of the film surface, which had a high surface potential having an average value of +10 V. The average value of the piezoelectric modulus was 15.5 ÷ 17.9 pC/V, and the magnitude of the coercive field was (3.05 ± 0.25)·10 5 V/cm. The formed PZT films can be used to manufacture the energy harvesters.
ISSN:0015-0193
1563-5112
DOI:10.1080/00150193.2022.2052246