Low Dose Gamma Irradiation of Alloy Junction Transistors

Investigations have been carried out, of the effects of small (10 kilorad) doses of 60 Co gamma radiation on germanium p-n-p alloy junction transistors, with particular reference to the effect upon gain and minority carrier lifetime. The results obtained support the ideas proposed by the author in a...

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Bibliographic Details
Published in:Journal of electronics and control 1962-04, Vol.12 (4), p.307-310
Main Author: VAUGHAN, D. E.
Format: Article
Language:English
Online Access:Get full text
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Summary:Investigations have been carried out, of the effects of small (10 kilorad) doses of 60 Co gamma radiation on germanium p-n-p alloy junction transistors, with particular reference to the effect upon gain and minority carrier lifetime. The results obtained support the ideas proposed by the author in an earlier paper dealing with the effect of radiation doses of the same magnitude upon germanium alloy junction diode parameters.
ISSN:0368-1947
DOI:10.1080/00207216208937387