The Observation of Lomer-Cottrell Dislocations in Boron-diffused (111) Silicon by Berg-Barrett Skew Reflections

Skew reflections wore employed to obtain a series of Berg-Barrett x-ray diffraction micrographs of shallow boron-diffused layers in (111) silicon. Diffusion-induced dislocations with ⟨110⟩ singular lines were observed, and their Burgers vectors, distribution and relative density were determined. The...

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Bibliographic Details
Published in:International journal of electronics 1966-07, Vol.21 (1), p.37-49
Main Authors: WOLFSON, R. G., JULEFF, E. M., LAPIERRE, A. G.
Format: Article
Language:English
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Summary:Skew reflections wore employed to obtain a series of Berg-Barrett x-ray diffraction micrographs of shallow boron-diffused layers in (111) silicon. Diffusion-induced dislocations with ⟨110⟩ singular lines were observed, and their Burgers vectors, distribution and relative density were determined. The dislocations are Lomer-Cottrell locks. Their distribution indicates that the two-step deposition-and-drive diffusion process, of the type commonly used in integrated-circuit fabrication, produces a solute profile which deviates considerably from the assumed Gaussian form. It is demonstrated that the images recorded on the x-ray micrographs represent well-defined dislocation aggregates rather than individual dislocations.
ISSN:0020-7217
1362-3060
DOI:10.1080/00207216608937896