Robust low power transmission gate (TG) based 9T SRAM cell with isolated read and write operation

Stability and performance of conventional SRAM cells operating at low voltages are severely affected due to enhanced process variations. This paper proposes a Transmission Gate (TG) based 9 T SRAM cell with independent read/write operation and compares its performance with 6 T, 8 T and 10 T SRAM cel...

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Bibliographic Details
Published in:International journal of electronics 2022-04, Vol.109 (4), p.652-668
Main Authors: Gupta, Ruchi, Dasgupta, S.
Format: Article
Language:English
Subjects:
Access time
Bias
body biasing
Feedback loops
hold stability
Low power SRAM
Positive feedback
read stability
Stability
Transistors
transmission gate-based SRAM
Transmission gates
write stability
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Summary:Stability and performance of conventional SRAM cells operating at low voltages are severely affected due to enhanced process variations. This paper proposes a Transmission Gate (TG) based 9 T SRAM cell with independent read/write operation and compares its performance with 6 T, 8 T and 10 T SRAM cells. The enhanced read and write ability of the cell is due to the selective use of positive feedback loop. To show the efficacy of the proposed technique, simulations are carried out using 130 nm UMC technology files on Cadence Virtuoso and HSPICE. The transistor size with minimum length and width is used in each configuration using the UMC 130 nm technology file for all the simulations. Various body biasing techniques (Reverse Body Bias and Forward Body Bias) are applied to reduce active and standby power. It has been observed that the proposed cell shows better results in terms of enhanced read, write and hold stability and for reduced power also. Further, the write access time is less for the proposed cell. The layout of the proposed architecture is also shown.
ISSN:0020-7217
1362-3060
DOI:10.1080/00207217.2021.1941285