Single-Ended 8T SRAM cell with high SNM and low power/energy consumption

This paper introduces an 8T single-ended SRAM cell to improve stability and decrease energy consumption. It cuts the pull-down path to the storage node written '1', enhancing the write ability. It uses an isolated read path to enhance the read stability with low power and energy consumptio...

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Bibliographic Details
Published in:International journal of electronics 2023-10, Vol.110 (10), p.1733-1755
Main Authors: Mohagheghi, Javad, Ebrahimi, Behzad, Torkzadeh, Pooya
Format: Article
Language:English
Subjects:
Energy consumption
Low power
Monte Carlo simulation
Power consumption
single-ended
Stability
static noise margin (SNM)
Static random access memory
static random access memory (SRAM)
Technology assessment
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Summary:This paper introduces an 8T single-ended SRAM cell to improve stability and decrease energy consumption. It cuts the pull-down path to the storage node written '1', enhancing the write ability. It uses an isolated read path to enhance the read stability with low power and energy consumption. At a supply voltage of 0.5 V, the read static noise margin, write margin, read energy, and write energy of the proposed cell are superior by 320%, 233%, 12%, and 26%, respectively, compared to the conventional 6T. We performed 5,000 Monte Carlo simulations in the 32 nm technology to evaluate read yields. The results show that our cell has 6.9x more yields than the conventional 6T SRAM cell. Therefore, the proposed cell can be a good option for high stability and low power/energy applications.
ISSN:0020-7217
1362-3060
DOI:10.1080/00207217.2022.2118848