Photoconduction in GaSe thin films

Photoconduction in GaSe thin films has been measured in the spectral energy range 1⋅0 eV-3⋅2 eV. Extrapolation of the linear region of the spectral response curve gives 1⋅67 eV as the energy gap of the as-grown films. Measurements have been made in the temperature- range 77 K-300 K and the activatio...

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Bibliographic Details
Published in:International journal of electronics 1981-07, Vol.51 (1), p.87-90
Main Authors: ANIS, MOHAMMAD KHALID, ZAHEER, MOHAMMAD YAR, NAZAR, FATEH MOHAMMAD
Format: Article
Language:English
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Summary:Photoconduction in GaSe thin films has been measured in the spectral energy range 1⋅0 eV-3⋅2 eV. Extrapolation of the linear region of the spectral response curve gives 1⋅67 eV as the energy gap of the as-grown films. Measurements have been made in the temperature- range 77 K-300 K and the activation energy for the photo-conductive processes is found to be 0⋅19 eV.
ISSN:0020-7217
1362-3060
DOI:10.1080/00207218108901303