Negative transient currents in amorphous semiconductors

In time-of-flight experiments with vitreous 0⋅55 As 2 S 3 : 0⋅45 Sb 2 S 3 , the effect of negative transient conductivity is observed and investigated. Reversal of polarity of the transient current, and a portion of negative (relative to the electric field direction) current, occurred for periods co...

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Bibliographic Details
Published in:International journal of electronics 1981-12, Vol.51 (6), p.735-742
Main Authors: ARKHIPOV, V. I., IOVU, M. A., IOVU, M. S., RUDENKO, A. I., SHUTOV, S. D.
Format: Article
Language:English
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Summary:In time-of-flight experiments with vitreous 0⋅55 As 2 S 3 : 0⋅45 Sb 2 S 3 , the effect of negative transient conductivity is observed and investigated. Reversal of polarity of the transient current, and a portion of negative (relative to the electric field direction) current, occurred for periods considerably greater than the transit time. A theoretical model is developed which explains the appearance of the negative current. The model assumes that transport is controlled by trapping and that the dipole moments of filled traps become different from those of empty traps. The dielectric permittivity due to this difference contributes an additional term to the displacement current, and this term may be negative and may dominate in 6 certain time interval. A comparison of theoretical and experimental field and temperature dependences of characteristic points of the j versus t curve over its negativo portion reveals information about the spatial and energy distribution of traps contributing the transient polarization.
ISSN:0020-7217
1362-3060
DOI:10.1080/00207218108901378