Quasi-static model for the capacitances in short-channel MOSFETs

A model that guarantees the conservation of charge in the simulation of MOS VLSI circuits is presented. The model is based on the ability to define four comoponents of charge for short-channel MOS transistors. The gate and bulk charges are found from a solution of a one-dimensional Poisson equation....

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Bibliographic Details
Published in:International journal of electronics 1990-02, Vol.68 (2), p.181-193
Main Authors: GHARABAGI, R., NOKALI, M. EL
Format: Article
Language:English
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Summary:A model that guarantees the conservation of charge in the simulation of MOS VLSI circuits is presented. The model is based on the ability to define four comoponents of charge for short-channel MOS transistors. The gate and bulk charges are found from a solution of a one-dimensional Poisson equation. The partitioning of the channel charge into source and drain charges is based on the solution of a one-dimensional current continuity equation. The model is used to predict the intrinsic capacitances of short-channel MOSFETs.
ISSN:0020-7217
1362-3060
DOI:10.1080/00207219008921159