RLC equivalent RC delay model for global VLSI interconnect in current mode signalling

Current-mode signalling significantly increases the bandwidth of on-chip interconnects and reduces the overall propagation delay. The inductive effect of interconnects is more dominant in submicron technologies. This is because an RC interconnects model results in a significant error in delay estima...

Full description

Saved in:
Bibliographic Details
Published in:International journal of modelling & simulation 2015-01, Vol.35 (1), p.27-34
Main Authors: Jadav, Sunil, Vashishth, Munish, Chandel, Rajeevan
Format: Article
Language:English
Subjects:
Current mode
Damping
Delay
Equivalence
equivalent resistance
Figure of merit
Integrated circuits
Interconnections
RLC circuits
Signaling
voltage mode
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Current-mode signalling significantly increases the bandwidth of on-chip interconnects and reduces the overall propagation delay. The inductive effect of interconnects is more dominant in submicron technologies. This is because an RC interconnects model results in a significant error in delay estimation. Consequently to avoid such errors, a delay model for current-mode signalling is proposed for RLC interconnect line in the present work. RLC interconnect line is modelled using characteristic impedance of line. The inductive effects which are dominant at lower technology nodes are modelled as an equivalent resistance ( ). RLC line is modelled into a new equivalent R eff C interconnect line. The efficacy of the proposed model is validated for 8 and 10 mm interconnect lines. It is inferred that current mode provides better performance compared to the voltage-mode signalling. It is found that current-mode signal transporting technique provides higher speed improvements. Secondly, the damping factor of a lumped RLC circuit is shown to be a useful figure of merit. The analysis is carried out for 180 nm technology node.
ISSN:0228-6203
1925-7082
DOI:10.1080/02286203.2015.1077009