Augmenting the internal quantum efficiency of GaN-based green light-emitting diodes by sandwiching active region with p-AlGaN layers

In this work, InGaN-based green light-emitting diodes (LEDs) are studied theoretically. We have minimized the problem of asymmetrical carrier distribution in the active region. We have sandwiched the active region between p-AlGaN layers and observed improvement in the device performance. The hole in...

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Bibliographic Details
Published in:Journal of modern optics 2020-05, Vol.67 (9), p.837-842
Main Authors: Usman, Muhammad, Anwar, Abdur-Rehman, Munsif, Munaza, Malik, Shahzeb, Islam, Noor Ul, Jamil, Tariq
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
efficiency
Emissions control
Gallium nitrides
green
InGaN
Light emitting diodes
Quantum efficiency
Radiative recombination
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Summary:In this work, InGaN-based green light-emitting diodes (LEDs) are studied theoretically. We have minimized the problem of asymmetrical carrier distribution in the active region. We have sandwiched the active region between p-AlGaN layers and observed improvement in the device performance. The hole injection, as well as the distribution, is improved remarkably in all the QWs. The asymmetry between the concentrations of electrons and holes in the emission region is reduced in contrast to the conventional structure. The radiative recombination is also enhanced because all the QWs contribute greatly in radiative recombination.
ISSN:0950-0340
1362-3044
DOI:10.1080/09500340.2020.1775906