Concentration of point defects in binary NiAl

A mean-field-type model was established to describe the concentration of point defects in binary NiAl by taking into account the effects of crystal expansion and off-stoichiometry. Different from some recent studies, this analysis shows that constitutional vacancies are present only in Al-rich NiAl...

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Bibliographic Details
Published in:Philosophical magazine letters 2003-06, Vol.83 (6), p.375-386
Main Authors: Hao, Y. L., Song, Y., Yang, R., Cui, Y. Y., Li, D., Niinomi, M.
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Exact sciences and technology
Metals. Metallurgy
Physics
Point defects (vacancies, interstitials, color centers, etc.) and defect clusters
Structure of solids and liquids
crystallography
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Summary:A mean-field-type model was established to describe the concentration of point defects in binary NiAl by taking into account the effects of crystal expansion and off-stoichiometry. Different from some recent studies, this analysis shows that constitutional vacancies are present only in Al-rich NiAl at T=0 K but that the vacancy concentration decreases with increasing temperature until diffusion is activated and thereafter becomes nearly independent of temperature. Such vacancy formation behaviour in Al-rich NiAl belongs to the category of metastable constitutional type according to a method of classifying vacancy formation in B2 crystals proposed in this letter.
ISSN:0950-0839
1362-3036
DOI:10.1080/0950083031000113367