Nickel metallization of Si by dynamic ion-beam mixing

• Published in: Radiation effects and defects in solids 1997-07, Vol.143 (1), p.65-74
• Main Authors: Matsuoka, M., Chubaci, J. F. D., Biersack, J. P., Watanabe, S., Kuratani, N., Ogata, K.
• Format: Article
• Language: English
• Subjects: Applied sciences; Cross-disciplinary physics: materials science; rheology; Dynamic ion-beam mixing; Exact sciences and technology; Ion and electron beam-assisted deposition; ion plating; Materials science; Metals. Metallurgy; Methods of deposition of films and coatings; film growth and epitaxy; Monte-Carlo simulation; Nickel silicide; Physics
• ISSN: 1042-0150; 1029-4953
• DOI: 10.1080/10420159708212949

Thin Ni films were prepared at room temperature by Ni metal vapor deposition on Si substrates and simultaneous irradiation by Ar ions with an energy of 2-20 keV. The reaction of Ni and Si during dynamic ion-beam mixing was studied. The fluences of the ion beam were 4.7 × 10 17 and 8.9 × 10 17 cm −2 , and arrival rate ratios Ni/Ar were 9.7 and 5.1. Concentration profiles of Ni, Si, Ar, C, and O were analyzed with Auger electron spectroscopy; the surface morphology and the crystalline structure were investigated with a cross-sectional scanning electron microscope and X-ray diffractometry. The theoretical profiles were calculated with the dynamic Monte-Carlo simulation code T-DYN for comparison with the experimentally obtained profiles. It was possible to observe the ballistic mixing effects and also thermally activated formation of nickel silicide.