PREPARATION AND PIEZOELECTRIC PROPERTIES OF SOL-GEL-DERIVED NB-DOPED PZT FILMS FOR MEMS APPLICATIONS

Sol-gel-derived niobium (Nb)-doped lead zirconate titanate (PZT) films have been deposited on silicon substrates with a lead titanate seeding layer by the multiple-spin-coating technique. The doping level of Nb ranges from 0 to 2 mol%. With the seeding layer, the PZT films can crystallize well into...

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Bibliographic Details
Published in:Integrated ferroelectrics 2006-11, Vol.80 (1), p.155-162
Main Authors: KWOK, K. W., KWOK, K. P., TSANG, R. C. W., CHAN, H. L. W., CHOY, C. L.
Format: Article
Language:English
Subjects:
Nb dopant
piezoelectric properties
PZT thin films
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Summary:Sol-gel-derived niobium (Nb)-doped lead zirconate titanate (PZT) films have been deposited on silicon substrates with a lead titanate seeding layer by the multiple-spin-coating technique. The doping level of Nb ranges from 0 to 2 mol%. With the seeding layer, the PZT films can crystallize well into the perovskite phase at a low temperature of 550°C for 2 h. The films are dense and have good dielectric and piezoelectric properties. Effective longitudinal and transverse piezoelectric coefficients (d 33,c and e 31,c ) of the films have been measured. Our results reveal that the Nb dopant effects on the PZT films are very similar to the experimentally-known effects on the corresponding bulk ceramics, i.e. enhancing both the longitudinal and transverse piezoelectric properties. For the PZT film doped with 1 mol% Nb, the observed values of d 33,c and e 31,c are 74 pm/V and 12.8 C/m 2 , respectively.
ISSN:1058-4587
1607-8489
DOI:10.1080/10584580600657377