THE PERFORMANCE OF Ge 2 Sb 2 Te 5 MATERIAL FOR PCRAM DEVICE

The performance of Nonvolatile phase-change-memory material Ge 2 Sb 2 Te 5 and nitrogen doped Ge 2 Sb 2 Te 5 as well as its device cell was investigated. The effects of the annealing temperature on the resistivity and crystal structure of the Ge 2 Sb 2 Te 5 were studied. The Hall measurement shows t...

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Bibliographic Details
Published in:Integrated ferroelectrics 2006-11, Vol.78 (1), p.261-270
Main Authors: LING, YUN, LIN, YINYIN, LAI, LIANZHANG, QIAO, BAOWEI, LAI, YUNFENG, FENG, JIE, TANG, TING'AO, CAI, BINGCHU, CHEN, BOMY
Format: Article
Language:English
Subjects:
PCRAM
Phase change
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Summary:The performance of Nonvolatile phase-change-memory material Ge 2 Sb 2 Te 5 and nitrogen doped Ge 2 Sb 2 Te 5 as well as its device cell was investigated. The effects of the annealing temperature on the resistivity and crystal structure of the Ge 2 Sb 2 Te 5 were studied. The Hall measurement shows the hole mobility decreased with the changing of film thickness from 10 nm. to 100 nm The GST resistivity can be increased effectively by doping nitrogen and the decrease of the film thickness. The high resistive GST is indispensable to minimize threshold voltage of PCRAM.
ISSN:1058-4587
1607-8489
DOI:10.1080/10584580600663375