Investigation on Divalent Metal Substituted Bismuth Titanate Ferroelectric Thin Films

Divalent metals Ca, Sr, and Ba were employed to substitute for some of the A-site bismuth in Bi 4 Ti 3 O 12 (BIT). The corresponding ferroelectric thin films (named CBiT, SBiT and BBiT) were derived by metal organic decomposition. Their remanent polarization (2Pr) values were 17.32 μC/cm 2 , 8.88 μC...

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Bibliographic Details
Published in:Integrated ferroelectrics 2011-01, Vol.124 (1), p.26-32
Main Authors: Xue, Kan-Hao, de Araujo, Carlos A. Paz, Celinska, Jolanta, McWilliams, Christopher
Format: Article
Language:English
Subjects:
Bismuth
Bismuth Titanate
Charge
Coercive Field
Current carriers
Fatigue (materials)
Ferroelectric Material
Ferroelectric materials
Ferroelectricity
Ferroelectrics
Metals
Site Engineering
Strontium
Thin films
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Summary:Divalent metals Ca, Sr, and Ba were employed to substitute for some of the A-site bismuth in Bi 4 Ti 3 O 12 (BIT). The corresponding ferroelectric thin films (named CBiT, SBiT and BBiT) were derived by metal organic decomposition. Their remanent polarization (2Pr) values were 17.32 μC/cm 2 , 8.88 μC/cm 2 and 21.34 μC/cm 2 . The smallest 2Pr value was found in SBiT, where its cation (Sr 2+ ) radius is in the middle of the three. On the other hand, the smallest coercive field was discovered in BBiT. No fatigue improvement was discovered in BBiT compared with BIT, probably due to the lowered charge amount carried by Ba 2+ .
ISSN:1058-4587
1607-8489
DOI:10.1080/10584587.2011.573714