Investigation of Coatings Formed by Thermal Oxidation on Monocrystalline Silicon

The results of complex experimental studies of the parameters of thin coatings of SiO 2 oxides on Si, formed by thermal oxidation at temperatures of 1200 °C, including studies using electron and X-ray spectroscopy, IR-Fourier spectrometer IRTracer-100 - developed by Shimadzu, Raman scattering, and t...

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Bibliographic Details
Published in:Integrated ferroelectrics 2024-01, Vol.240 (1), p.53-63
Main Authors: Igamov, B. D., Imanova, G. T., Kamardin, A. I., Bekpulatov, I. R.
Format: Article
Language:English
Subjects:
band gap
Coatings
Crystal lattices
Crystal structure
electric field and light reflection
Electric field strength
Infrared spectroscopy
Oxidation
Raman spectra
Silicon dioxide
thermal annealing
Thermal oxidation
thin coatings
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Summary:The results of complex experimental studies of the parameters of thin coatings of SiO 2 oxides on Si, formed by thermal oxidation at temperatures of 1200 °C, including studies using electron and X-ray spectroscopy, IR-Fourier spectrometer IRTracer-100 - developed by Shimadzu, Raman scattering, and test electrophysical structures, are presented. Data have been obtained that for a silicon dioxide thickness of about 400 nm, the porosity of the coating does not exceed 2/cm 2 , and the electric field strength for the breakdown of the dioxide reaches 5·10 6 V/cm. The crystal structure of SiO 2 is triclinic, lattice period a = 4.9160 Å, b = 4.9170 Å, c = 5.4070 Å, a = 90.000, b = 90.000, γ = 120.000, density 2.64 g/cm³.
ISSN:1058-4587
1607-8489
DOI:10.1080/10584587.2023.2296317