Electrical properties of ferroelectric-capacitor-gate si mos transistors using p(l)zt films

A ferroelectric-capacitor-gate Si MOSFET which consists of an SiO 2 /Si MOSFET and a ferroelectric capacitor has been demonstrated. It is shown that memory functions can be obtained by connecting the ferroelectric capacitor with the gate of MOSFETs. The operation of such devices is similar to that o...

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Bibliographic Details
Published in:Integrated ferroelectrics 1997-01, Vol.15 (1-4), p.137-144
Main Authors: Tokumitsu, Eisuke, Shimamura, Toshishige, Ishiwara, Hiroshi
Format: Article
Language:English
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Summary:A ferroelectric-capacitor-gate Si MOSFET which consists of an SiO 2 /Si MOSFET and a ferroelectric capacitor has been demonstrated. It is shown that memory functions can be obtained by connecting the ferroelectric capacitor with the gate of MOSFETs. The operation of such devices is similar to that of metal-ferroelectric-semiconductor (MFS) FETs. The large memory window or threshold voltage shift can be obtained with a ferroelectric capacitor which has a large coercive voltage. The memory effect of the device has been demonstrated by showing the drain current change by a previously applied "write" pulse at a fixed gate voltage of 0V.
ISSN:1058-4587
1607-8489
DOI:10.1080/10584589708015704